Resonant tunneling through two impurities in disordered barriers

被引:39
作者
Savchenko, AK [1 ]
Kuznetsov, VV [1 ]
Woolfe, A [1 ]
Mace, DR [1 ]
Pepper, M [1 ]
Ritchie, DA [1 ]
Jones, GAC [1 ]
机构
[1] UNIV CAMBRIDGE,CAVENDISH LAB,CAMBRIDGE CB3 0HE,ENGLAND
来源
PHYSICAL REVIEW B | 1995年 / 52卷 / 24期
关键词
D O I
10.1103/PhysRevB.52.R17021
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In short lateral barriers of GaAs metal-semiconductor field-effect transistor, we have observed resonant tunneling through two impurities. Contrary to a steplike feature in I(V) due to an elementary one-impurity resonance, the two-impurity resonance manifests itself as a peak in the current. A magnetic field strongly suppresses the peak amplitude but has little effect on its width. We analyze the magnetic-field and temperature dependences of the two-impurity resonances.
引用
收藏
页码:17021 / 17024
页数:4
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