SHORT-RANGE ORDER VARIATIONS IN AMORPHOUS-SILICON

Neutron diffraction measurements have been performed on two forms of amorphous Si prepared by low pressure rf sputtering and subsequent annealing at 600C. Radial distribution studies on thick films indicate substantial changes in the second peak due to structural relaxation effects. Raman scattering measurements on these samples provide the first direct comparison between indirect and direct probes of bond angle disorder and its variation in the amorphous states of tetrahedral group IV systems.