STRUCTURAL ORDER AND DYNAMICS OF AMORPHOUS SI AND GE

[1] BEEMAN D, COMMUNICATION

[2] CARDONA M, 1985, 2ND P INT C PHON PHY, P2

[3] CALORIMETRIC STUDIES OF CRYSTALLIZATION AND RELAXATION OF AMORPHOUS SI AND GE PREPARED BY ION-IMPLANTATION [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) : 1795 - 1804

[4] A NEUTRON-DIFFRACTION STUDY OF THE STRUCTURE OF EVAPORATED AMORPHOUS-GERMANIUM [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1982, 48 (2-3) : 265 - 289

[5] FORTNER J, IN PRESS

[6] MEASUREMENT OF PHONON DENSITIES OF STATES FOR PURE AND HYDROGENATED AMORPHOUS-SILICON [J]. PHYSICAL REVIEW LETTERS, 1984, 52 (08) : 644 - 647

[7] Lannin J. S., 1987, Disordered semiconductors, P283

[8] STRUCTURAL ORDER AND DYNAMICS OF AMORPHOUS SI AND GE [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 : 39 - 46

[9] LANNIN JS, 1984, SEMICONDUCT SEMIMET, V21, P159

[10] LOW-FREQUENCY COUPLING-CONSTANTS FOR RAMAN-SCATTERING IN AMORPHOUS SOLIDS [J]. SOLID STATE COMMUNICATIONS, 1973, 12 (09) : 947 - 950

[1] BEEMAN D, COMMUNICATION

[2] CARDONA M, 1985, 2ND P INT C PHON PHY, P2

[3] CALORIMETRIC STUDIES OF CRYSTALLIZATION AND RELAXATION OF AMORPHOUS SI AND GE PREPARED BY ION-IMPLANTATION [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) : 1795 - 1804

[4] A NEUTRON-DIFFRACTION STUDY OF THE STRUCTURE OF EVAPORATED AMORPHOUS-GERMANIUM [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1982, 48 (2-3) : 265 - 289

[5] FORTNER J, IN PRESS

[6] MEASUREMENT OF PHONON DENSITIES OF STATES FOR PURE AND HYDROGENATED AMORPHOUS-SILICON [J]. PHYSICAL REVIEW LETTERS, 1984, 52 (08) : 644 - 647

[7] Lannin J. S., 1987, Disordered semiconductors, P283

[8] STRUCTURAL ORDER AND DYNAMICS OF AMORPHOUS SI AND GE [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 : 39 - 46

[9] LANNIN JS, 1984, SEMICONDUCT SEMIMET, V21, P159

[10] LOW-FREQUENCY COUPLING-CONSTANTS FOR RAMAN-SCATTERING IN AMORPHOUS SOLIDS [J]. SOLID STATE COMMUNICATIONS, 1973, 12 (09) : 947 - 950