MEASUREMENT OF PHONON DENSITIES OF STATES FOR PURE AND HYDROGENATED AMORPHOUS-SILICON

被引：72

作者：

KAMITAKAHARA, WA ^{[1
]}

SHANKS, HR ^{[1
]}

MCCLELLAND, JF ^{[1
]}

BUCHENAU, U ^{[1
]}

GOMPF, F ^{[1
]}

PINTSCHOVIUS, L ^{[1
]}

机构：

[1] KERNFORSCHUNGSZENTRUM KARLSRUHE GMBH,INST NUKL FESTKORPERPHYS,D-7500 KARLSRUHE 1,FED REP GER

来源：

PHYSICAL REVIEW LETTERS | 1984年 / 52卷 / 08期

关键词：

D O I：

10.1103/PhysRevLett.52.644

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：644 / 647

页数：4

共 16 条

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[2]

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[5]

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[6]

CHEN SC, 1980, PHYS REV B, V22, P2913

[7] DETERMINATION OF THE H-DISTRIBUTION IN REACTIVELY SPUTTERED AMORPHOUS SILICON-HYDROGEN ALLOYS BY PROTON NUCLEAR MAGNETIC-RESONANCE [J].

JEFFREY, FR ;

LOWRY, ME .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) :5529-5533

[8] CONTROL OF DIHYDRIDE BOND DENSITY IN REACTIVE SPUTTERED AMORPHOUS-SILICON [J].

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[9]

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[10]

LANNIN JS, 1982, PHYS REV B, V26, P3506, DOI 10.1103/PhysRevB.26.3506

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