LOCALIZED VIBRATIONAL MODES IN GALLIUM-ARSENIDE CONTAINING SILICON AND BORON

被引：32

作者：

THOMPSON, F

NEWMAN, RC

机构：

来源：

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS | 1972年 / 5卷 / 15期

关键词：

D O I：

10.1088/0022-3719/5/15/015

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1999 / &

共 22 条

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[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (12) : 2737 - &
[7] HAYES W, 1965, PHYS REV, V138, P1227
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SPITZER, WG
[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (06) : 2509 - &
[9] LOCAL MODE ABSORPTION IN COMPENSATED SILICON-DOPED GALLIUM ARSENIDE
LORIMOR, OG
SPITZER, WG
[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (10) : 3687 - +
[10] MITCHELL EW, 1966, J PHYS SOC JPN, VS 21, P292