INFLUENCE OF CARRIER CAPTURE ON RESOLUTION OF SEMICONDUCTOR RADIATION COUNTERS

被引：32

作者：

MAKOVSKY, LL

STROKAN, NB

TISNEK, NI

机构：

[1] A.F.Ioffe Physico-Technical Institute, USSR Academy of Sciences, Leningrad, USSR.

来源：

关键词：

D O I：

10.1109/TNS.1968.4324951

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

[No abstract available]

引用

页码：304 / +

页数：1

共 9 条

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[3] TECHNIQUES FOR THE FABRICATION OF LITHIUM DRIFTED GERMANIUM GAMMA DETECTORS
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[4] COMPUTER TECHNIQUES FOR ANALYSIS OF GAMMA-RAY SPECTRA OBTAINED WITH NAI AND LITHIUM-ION DRIFTED GERMANIUM DETECTORS
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[J]. NUCLEAR INSTRUMENTS & METHODS, 1966, 43 (01): : 209 - +
[5] JUNGCLAUSSEN H, 1966, KERNENERGIE, V9, P322
[6] MAKOVSKY LL, 1967, PHYS TEKHN POLUPR, V1, P1229
[7] OBSERVATIONS ON ENERGY RESOLUTION OF GERMANIUM DETECTORS FOR 0.1-10 MEV GAMMA RAYS
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[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1966, NS13 (03) : 252 - +
[8] Ryvkin S.M., 1963, PHOTOELECTRIC PHENOM
[9] STROKAN NB, 1964, PRIB TECH EXPER, V1, P91