RESIDUAL STRAINS IN PHOSPHORUS-DIFFUSED SILICON

被引：18

作者：

JOSHI, ML

MA, CH

MAKRIS, J

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1967年 / 38卷 / 02期

关键词：

D O I：

10.1063/1.1709402

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：725 / &

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[8]

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[10]

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