RECENT DEVELOPMENTS IN LIGHT-EMITTING-DIODE TECHNOLOGY

被引：27

作者：

CRAFORD, MG ^{[1
]}

机构：

[1] MONSANTO COMMERCIAL PROD CO,DIV ELECTR,PALO ALTO,CA 94304

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1977年 / 24卷 / 07期

关键词：

D O I：

10.1109/T-ED.1977.18854

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：935 / 943

页数：9

共 20 条

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[4]

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[5] RADIATIVE RECOMBINATION MECHANISMS IN GAASP DIODES WITH AND WITHOUT NITROGEN DOPING [J].

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[6] VAPOR-PHASE EPITAXIAL MATERIALS FOR LED APPLICATIONS [J].

CRAFORD, MG ;

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[7]

CRAFORD MG, 1973, PROGR SOLID STATE CH, V8, P127

[8]

CRAFORD MG, 1974, SOLID STATE TECHNOL, P39

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