EMPIRICAL PSEUDOPOTENTIAL APPROACH TO BAND STRUCTURES OF DIAMOND AND SILICON CARBIDE

被引：25

作者：

VANHAERINGEN, W

JUNGINGER, HG

机构：

[1] Philips Research Laboratories, N.V. Philips' Gloeilampenfabrieken, Eindhoven

[2] Philips' Zentrallaboratorium GmbH, Aache

来源：

SOLID STATE COMMUNICATIONS | 1969年 / 7卷 / 16期

关键词：

D O I：

10.1016/0038-1098(69)90501-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Electronic band structures of diamond, silicon and silicon carbide in the sphalerite and wurtzite structure are obtained using a pseudopotential method. The atomic pseudopotentials in diamond and silicon are also used in the polytypes of silicon carbide. The form factors are found by adjustment of the respective band structures to experiments. © 1969.

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页码：1135 / +

页数：1

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