QUANTITATIVE ELECTRON-SPIN-RESONANCE ANALYSIS OF DEEP DEFECTS IN LEC-GROWN GAP

被引：26

作者：

KAUFMANN, U ^{[1
]}

KENNEDY, TA ^{[1
]}

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1981年 / 10卷 / 02期

关键词：

D O I：

10.1007/BF02654799

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：347 / 360

页数：14

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