MBE GROWTH OF 3C.SIC/6H.SIC AND THE ELECTRIC PROPERTIES OF ITS P-N-JUNCTION

Crystal growth of 3C multiplied by (times) SiC on a 6H multiplied by (times) SiC substrate is performed to develop a practical device utilizing a p-n junction of SiC. The growth condition to obtain stoichiometric crystals relating to a substrate temperature T//s//u//b, both molecular beam intensities J//S//i and J//C and their ratio J//S//i/J//C are established. To form a p-type 3C multiplied by (times) SiC, we used a Si source containing B (boron) of proper atomic percentage in accordance with the dopant density. The p-n diode of p-3C multiplied by (times) SiC/n-6H multiplied by (times) SiC showed rectified I-V characteristics and steep breakdown characteristics like the Si p-n junction.