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CHARGE MULTIPLICATION IN AU-SIC (6H) SCHOTTKY JUNCTIONS
被引:11
作者
:
GLOVER, GH
论文数:
0
引用数:
0
h-index:
0
机构:
GE,RES & DEV CTR,POB 8,SCHENECTADY,NY 12301
GE,RES & DEV CTR,POB 8,SCHENECTADY,NY 12301
GLOVER, GH
[
1
]
机构
:
[1]
GE,RES & DEV CTR,POB 8,SCHENECTADY,NY 12301
来源
:
JOURNAL OF APPLIED PHYSICS
|
1975年
/ 46卷
/ 11期
关键词
:
D O I
:
10.1063/1.321514
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:4842 / 4844
页数:3
相关论文
共 9 条
[1]
TEMPERATURE DEPENDENCE OF AVALANCHE MULTIPLICATION IN SEMICONDUCTORS
CROWELL, CR
论文数:
0
引用数:
0
h-index:
0
CROWELL, CR
SZE, SM
论文数:
0
引用数:
0
h-index:
0
SZE, SM
[J].
APPLIED PHYSICS LETTERS,
1966,
9
(06)
: 242
-
&
[2]
IONIZATION RATE IN GAAS DETERMINED FROM PHOTOMULTIPLICATION IN A SCHOTTKY-BARRIER
GLOVER, GH
论文数:
0
引用数:
0
h-index:
0
机构:
GE,RES & DEV CTR,SCHENECTADY,NY 12301
GE,RES & DEV CTR,SCHENECTADY,NY 12301
GLOVER, GH
[J].
JOURNAL OF APPLIED PHYSICS,
1973,
44
(07)
: 3253
-
3256
[3]
GUTS VV, 1969, SOV PHYS SEMICOND+, V3, P331
[4]
ELECTRON EMISSION FROM BREAKDOWN REGIONS IN SIC P-N JUNCTIONS
PATRICK, L
论文数:
0
引用数:
0
h-index:
0
PATRICK, L
CHOYKE, WJ
论文数:
0
引用数:
0
h-index:
0
CHOYKE, WJ
[J].
PHYSICAL REVIEW LETTERS,
1959,
2
(02)
: 48
-
50
[5]
Philipp HR, 1960, SILICON CARBIDE HIGH, P366
[6]
EFFECTS OF DEEP IMPURITIES ON N+P JUNCTION REVERSE-BIASED SMALL-SIGNAL CAPACITANCE
SCHIBLI, E
论文数:
0
引用数:
0
h-index:
0
SCHIBLI, E
MILNES, AG
论文数:
0
引用数:
0
h-index:
0
MILNES, AG
[J].
SOLID-STATE ELECTRONICS,
1968,
11
(03)
: 323
-
+
[7]
THERMAL CONDUCTIVITY OF PURE + IMPURE SILICON SILICON CARBIDE + DIAMOND
SLACK, GA
论文数:
0
引用数:
0
h-index:
0
SLACK, GA
[J].
JOURNAL OF APPLIED PHYSICS,
1964,
35
(12)
: 3460
-
+
[8]
SZE SM, 1969, PHYSICS SEMICONDUCTO, P114
[9]
AVALANCHE BREAKDOWN IN EPITAXIAL SIC P-N JUNCTIONS
VANOPDORP, C
论文数:
0
引用数:
0
h-index:
0
机构:
Philips Research Laboratories, N. V. Philips Gloeilampenfabrieken, Eindhoven
VANOPDORP, C
VRAKKING, J
论文数:
0
引用数:
0
h-index:
0
机构:
Philips Research Laboratories, N. V. Philips Gloeilampenfabrieken, Eindhoven
VRAKKING, J
[J].
JOURNAL OF APPLIED PHYSICS,
1969,
40
(05)
: 2320
-
+
←
1
→
共 9 条
[1]
TEMPERATURE DEPENDENCE OF AVALANCHE MULTIPLICATION IN SEMICONDUCTORS
CROWELL, CR
论文数:
0
引用数:
0
h-index:
0
CROWELL, CR
SZE, SM
论文数:
0
引用数:
0
h-index:
0
SZE, SM
[J].
APPLIED PHYSICS LETTERS,
1966,
9
(06)
: 242
-
&
[2]
IONIZATION RATE IN GAAS DETERMINED FROM PHOTOMULTIPLICATION IN A SCHOTTKY-BARRIER
GLOVER, GH
论文数:
0
引用数:
0
h-index:
0
机构:
GE,RES & DEV CTR,SCHENECTADY,NY 12301
GE,RES & DEV CTR,SCHENECTADY,NY 12301
GLOVER, GH
[J].
JOURNAL OF APPLIED PHYSICS,
1973,
44
(07)
: 3253
-
3256
[3]
GUTS VV, 1969, SOV PHYS SEMICOND+, V3, P331
[4]
ELECTRON EMISSION FROM BREAKDOWN REGIONS IN SIC P-N JUNCTIONS
PATRICK, L
论文数:
0
引用数:
0
h-index:
0
PATRICK, L
CHOYKE, WJ
论文数:
0
引用数:
0
h-index:
0
CHOYKE, WJ
[J].
PHYSICAL REVIEW LETTERS,
1959,
2
(02)
: 48
-
50
[5]
Philipp HR, 1960, SILICON CARBIDE HIGH, P366
[6]
EFFECTS OF DEEP IMPURITIES ON N+P JUNCTION REVERSE-BIASED SMALL-SIGNAL CAPACITANCE
SCHIBLI, E
论文数:
0
引用数:
0
h-index:
0
SCHIBLI, E
MILNES, AG
论文数:
0
引用数:
0
h-index:
0
MILNES, AG
[J].
SOLID-STATE ELECTRONICS,
1968,
11
(03)
: 323
-
+
[7]
THERMAL CONDUCTIVITY OF PURE + IMPURE SILICON SILICON CARBIDE + DIAMOND
SLACK, GA
论文数:
0
引用数:
0
h-index:
0
SLACK, GA
[J].
JOURNAL OF APPLIED PHYSICS,
1964,
35
(12)
: 3460
-
+
[8]
SZE SM, 1969, PHYSICS SEMICONDUCTO, P114
[9]
AVALANCHE BREAKDOWN IN EPITAXIAL SIC P-N JUNCTIONS
VANOPDORP, C
论文数:
0
引用数:
0
h-index:
0
机构:
Philips Research Laboratories, N. V. Philips Gloeilampenfabrieken, Eindhoven
VANOPDORP, C
VRAKKING, J
论文数:
0
引用数:
0
h-index:
0
机构:
Philips Research Laboratories, N. V. Philips Gloeilampenfabrieken, Eindhoven
VRAKKING, J
[J].
JOURNAL OF APPLIED PHYSICS,
1969,
40
(05)
: 2320
-
+
←
1
→