ACCURATE APPROXIMATION OF GENERALIZED EINSTEIN RELATION FOR DEGENERATE SEMICONDUCTORS

被引：54

作者：

NILSSON, NG ^{[1
]}

机构：

[1] ROY INST TECHNOL,DEPT PHYS,STOCKHOLM,SWEDEN

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1973年 / 19卷 / 01期

关键词：

D O I：

10.1002/pssa.2210190159

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K75 / K78

页数：4

共 9 条

[1]

BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS

CHAKRAVA.AN ;

PARUI, DP .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1972, 14 (01) :K23-K26

[3] ON THE DIFFUSION THEORY OF RECTIFICATION [J].

LANDSBERG, PT .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1952, 213 (1113) :226-237

[4] EINSTEIN RELATION [J].

LANDSBERG, PT .

[5]

LI SS, 1968, PR INST ELECTR ELECT, V56, P1256

[6] GENERALIZED EINSTEIN RELATION FOR DEGENERATE SEMICONDUCTORS [J].

LINDHOLM, FA ;

AYERS, RW .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (03) :371-&

NILSSON, NG ;

SVANTESSON, KG .

[8]

NILSSON NH, TO BE PUBLISHED

[9]

SPENKE E, 1956, ELEKTRONISCHE HALBLE