SINGLE-CRYSTAL NIOBIUM NITRIDE THIN-FILMS PREPARED WITH RADICAL BEAM ASSISTED DEPOSITION

被引：27

作者：

HAYASHI, N

MURZIN, IH

SAKAMOTO, I

OHKUBO, M

机构：

[1] Electrotechnical Laboratory, Applied Radiation Physics Section, Tsukuba-shi, Ibaraki-ken, 305

来源：

THIN SOLID FILMS | 1995年 / 259卷 / 02期

关键词：

EPITAXY; NIOBIUM; NITRIDES; SUPERCONDUCTIVITY;

D O I：

10.1016/0040-6090(94)06436-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We employed a radical beam assisted deposition technique to prepare single-crystal niobium nitride thin films on MgO(100) substrates. The radical beam containing excited species of nitrogen was produced by an electron cyclotron resonance plasma source and used to irradiate the growing Nb film which was deposited simultaneously by an electron-gun vapour source. The nitride film was found to grow epitaxially on the substrate heated to 600-650 degrees C. The resulting NbN film formed had predominantly B1 structure, resistivity of 44 mu Omega cm at 20 K, and almost equiatomic composition.

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收藏

页码：146 / 149

页数：4

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