PHOTOELECTROCHEMICAL PROPERTIES OF A GAP ELECTRODE WITH AN N/P JUNCTION

被引：13

作者：

CARLSSON, P ^{[1
]}

UOSAKI, K ^{[1
]}

HOLMSTROM, B ^{[1
]}

KITA, H ^{[1
]}

机构：

[1] HOKKAIDO UNIV,FAC SCI,DEPT CHEM,SAPPORO,HOKKAIDO 060,JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1989年 / 136卷 / 02期

关键词：

D O I：

10.1149/1.2096674

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：524 / 528

页数：5

共 23 条

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[9] SEMICONDUCTOR ELECTRODES .11. BEHAVIOR OF N-TYPE AND P-TYPE SINGLE-CRYSTAL SEMICONDUCTORS COVERED WITH THIN NORMAL-TIO2 FILMS [J].

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[10] PHOTOELECTROCHEMICAL BEHAVIOR OF P-TYPE BORON PHOSPHIDE PHOTOELECTRODE IN ACIDIC SOLUTION [J].

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