THEORY OF THE PHOTOLUMINESCENCE SPECTRA OF POROUS SILICON

被引:89
作者
JOHN, GC
SINGH, VA
机构
[1] Physics Department, Indian Institute of Technology, Kanpur
来源
PHYSICAL REVIEW B | 1994年 / 50卷 / 08期
关键词
D O I
10.1103/PhysRevB.50.5329
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Porous silicon (PS) with its distribution of crystallite sizes is a highly disordered material. We present a theoretical formulation to explain the photoluminescence (PL) spectra of porous silicon. We base our formalism on the quantum confinement model using methods similar to those of Kane and Lifshitz. A minimal set of parameters is employed whose numerical values are obtained from independent experiments and/or microscopic theories. Our work demonstrates (i) a downshift in the PL peak due to the size distribution, thus facilitating the use of smaller and physically reasonable excition binding energy; (ii) a PL spectrum with a line-shape asymmetry on the energy scale, having a full width at half maximum of congruent-to 350 eV, in consonance with experiments; (iii) the presence of both columns and dots in PS; (iv) the presence of local inhomogeneities. Modifications of our model and extensions to related experimental phenomena are also discussed.
引用
收藏
页码:5329 / 5334
页数:6
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