ATOMIC LAYER EPITAXY IN DEPOSITION OF VARIOUS OXIDE AND NITRIDE THIN-FILMS

被引：61

作者：

LESKELA, M

RITALA, M

机构：

来源：

JOURNAL DE PHYSIQUE IV | 1995年 / 5卷 / C5期

关键词：

D O I：

10.1051/jphyscol:19955111

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Atomic Layer Epitaxy (ALE) is a chemical vapor phase thin film deposition method which is based on saturative surface reactions. As the film is growing in a self-limiting manner ALE is a promising method to deposit thin, high-quality films for micro- and optoelectronics. In the present paper the deposition of different dielectric oxides, conducting oxides as well as nitrides is reviewed giving emphasis to precursors and their effect on growth mechanisms and film properties.

引用

页码：937 / 951

页数：15

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