EXPERIMENTS ON THE FORMATION OF LOW RESISTANCE IN-CONTACTS ON AL-DOPED ZNSE

被引：2

作者：

FRIBERG, A

HOLWECH, I

NOST, B

机构：

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1981年 / 26卷 / 04期

关键词：

D O I：

10.1007/BF00617844

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：239 / 242

页数：4

共 16 条

[1] CARRIER MOBILITY AND SHALLOW IMPURITY STATES IN ZNSE AND ZNTE [J].

AVEN, M ;

SEGALL, B .

PHYSICAL REVIEW, 1963, 130 (01) :81-+

[2]

BJERKELAND H, 1972, PHYS NORV, V6, P139

[3] GROWTH AND ELECTRICAL CHARACTERISTICS OF EPITAXIAL LAYERS OF ZINC SELENIDE ON P-TYPE GERMANIUM [J].

CALOW, JT ;

OWEN, SJT ;

WEBB, PW .

PHYSICA STATUS SOLIDI, 1968, 28 (01) :295-&

[4]

Crowell C. R., 1969, Ohmic contacts to semiconductors, P17

[5] NORMALIZED THERMIONIC-FIELD (T-F) EMISSION IN METAL-SEMICONDUCTOR (SCHOTTKY) BARRIERS [J].

CROWELL, CR ;

RIDEOUT, VL .

SOLID-STATE ELECTRONICS, 1969, 12 (02) :89-&

[6] INJECTION ELECTROLUMINESCENCE IN ZNSE METAL-SEMICONDUCTOR DIODES [J].

FISCHER, AG .

PHYSICS LETTERS, 1964, 12 (04) :313-314

[7] ELECTRICAL-PROPERTIES OF ZINC SELENIDE [J].

JONES, G ;

WOODS, J .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1976, 9 (05) :799-810

[8] MECHANISM OF FORMATION OF OHMIC CONTACTS TO ZNSE, ZNS, AND MIXED-CRYSTALS ZNSXSE1-X [J].

KAUFMAN, RG ;

DOWBOR, P .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (10) :4487-4490

[9] FIELD AND THERMIONIC-FIELD EMISSION IN SCHOTTKY BARRIERS [J].

PADOVANI, FA ;

STRATTON, R .

SOLID-STATE ELECTRONICS, 1966, 9 (07) :695-&

[10] PRECIPITATION EFFECTS IN INDIUM-DOPED ZINC SELENIDE [J].

RUSSELL, GJ ;

VINCENT, B ;

WOODS, J .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 63 (02) :573-584

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