MINIMIZING WAFER SURFACE DAMAGE AND CHAMBER MATERIAL CONTAMINATION IN NEW PLASMA PROCESSING EQUIPMENT

被引：13

作者：

GOTO, H ^{[1
]}

SASAKI, M ^{[1
]}

OHMI, T ^{[1
]}

SHIBATA, T ^{[1
]}

YAMAGAMI, A ^{[1
]}

OKAMURA, N ^{[1
]}

KAMIYA, O ^{[1
]}

机构：

[1] CANON INC, DIV THIN FILM TECHNOL, TOKYO 146, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 12期

关键词：

PLASMA POTENTIAL; SELF-BIAS VOLTAGE; ION BOMBARDMENT; PLASMA DAMAGE; CONTAMINATION; MAGNETRON; RF PLASMA; GLOW DISCHARGE;

D O I：

10.1143/JJAP.29.L2395

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Magnetic enhancement was determined to be effective in reduction of the plasma potential. In extremely high-excitation-frequency plasma, the self-bias voltage of the electrode was substantially reduced, while the plasma potential remained constant. The plasma potential was effectively controlled by utilizing a DC-biased shield electrode, and found to be very effective in minimizing the chamber contamination. The dual rf excitation plasma processing equipment was proposed and found to be capable of controlling the self-bias of the substrate without altering the target self-bias voltage.

引用

页码：L2395 / L2397

页数：3