FORMATION OF DEVICE-GRADE EPITAXIAL SILICON FILMS AT EXTREMELY LOW-TEMPERATURES BY LOW-ENERGY BIAS SPUTTERING

被引：86

作者：

OHMI, T

ICHIKAWA, T

IWABUCHI, H

SHIBATA, T

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 10期

关键词：

D O I：

10.1063/1.343786

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4756 / 4766

页数：11

共 24 条

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[8]

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[10] CRYSTAL-STRUCTURE ANALYSIS OF EPITAXIAL SILICON FILMS FORMED BY A LOW KINETIC-ENERGY PARTICLE PROCESS [J].

OHMI, T ;

ICHIKAWA, T ;

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IWABUCHI, H .

APPLIED PHYSICS LETTERS, 1989, 54 (06) :523-525

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