ELECTRICAL QUALITY OF LOW-TEMPERATURE (TDEP=775-DEGREES-C) EPITAXIAL SILICON - THE EFFECT OF DEPOSITION RATE

被引：15

作者：

BURGER, WR

REIF, R

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 02期

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D O I：

10.1063/1.340249

中图分类号：

O59 [应用物理学];

学科分类号：

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页码：383 / 389

页数：7

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