CRYSTAL-STRUCTURE ANALYSIS OF EPITAXIAL SILICON FILMS FORMED BY A LOW KINETIC-ENERGY PARTICLE PROCESS

被引：16

作者：

OHMI, T

ICHIKAWA, T

SHIBATA, T

IWABUCHI, H

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 06期

关键词：

D O I：

10.1063/1.100919

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：523 / 525

页数：3

共 8 条

[1] ELECTRICAL CHARACTERIZATION OF EPITAXIAL SILICON FILMS FORMED BY A LOW KINETIC-ENERGY PARTICLE PROCESS [J].

OHMI, T ;

IWABUCHI, H ;

SHIBATA, T ;

ICHIKAWA, T .

APPLIED PHYSICS LETTERS, 1989, 54 (03) :253-255

[2] LOW-TEMPERATURE SILICON EPITAXY BY LOW-ENERGY BIAS SPUTTERING [J].

OHMI, T ;

MATSUDO, K ;

SHIBATA, T ;

ICHIKAWA, T ;

IWABUCHI, H .

APPLIED PHYSICS LETTERS, 1988, 53 (05) :364-366

[3] ROOM-TEMPERATURE COPPER METALLIZATION FOR ULTRALARGE-SCALE INTEGRATED-CIRCUITS BY A LOW KINETIC-ENERGY PARTICLE PROCESS [J].

OHMI, T ;

SAITO, T ;

SHIBATA, T ;

NITTA, T .

APPLIED PHYSICS LETTERS, 1988, 52 (26) :2236-2238

[4] INSITU SUBSTRATE-SURFACE CLEANING FOR VERY LOW-TEMPERATURE SILICON EPITAXY BY LOW-KINETIC-ENERGY PARTICLE BOMBARDMENT [J].

OHMI, T ;

ICHIKAWA, T ;

SHIBATA, T ;

MATSUDO, K ;

IWABUCHI, H .

APPLIED PHYSICS LETTERS, 1988, 53 (01) :45-47

[5]

OHMI T, 1987, ULSI SCI TECHNOLOGY, V87, P574

[6]

OHMI T, 1987, 1ST P INT S ULSI SCI, V87, P805

[7]

OHMI T, 1988, 1988 C SOL STAT DEV, P49

[8]

OHMI T, 1987, 1988 ULSI SCI TECHNO, V87, P574

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