LOW-TEMPERATURE SILICON EPITAXY BY LOW-ENERGY BIAS SPUTTERING

被引：39

作者：

OHMI, T

MATSUDO, K

SHIBATA, T

ICHIKAWA, T

IWABUCHI, H

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 05期

关键词：

D O I：

10.1063/1.99914

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：364 / 366

页数：3

共 8 条

[1] LOW-TEMPERATURE SILICON EPITAXY BY PARTIALLY IONIZED VAPOR-DEPOSITION [J].

ITOH, T ;

NAKAMURA, T ;

MUROMACHI, M ;

SUGIYAMA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (04) :553-557

[2] ROOM-TEMPERATURE COPPER METALLIZATION FOR ULTRALARGE-SCALE INTEGRATED-CIRCUITS BY A LOW KINETIC-ENERGY PARTICLE PROCESS [J].

OHMI, T ;

SAITO, T ;

SHIBATA, T ;

NITTA, T .

APPLIED PHYSICS LETTERS, 1988, 52 (26) :2236-2238

[3] INSITU SUBSTRATE-SURFACE CLEANING FOR VERY LOW-TEMPERATURE SILICON EPITAXY BY LOW-KINETIC-ENERGY PARTICLE BOMBARDMENT [J].

OHMI, T ;

ICHIKAWA, T ;

SHIBATA, T ;

MATSUDO, K ;

IWABUCHI, H .

APPLIED PHYSICS LETTERS, 1988, 53 (01) :45-47

[4] HIGH-RATE GROWTH AT LOW-TEMPERATURES BY FREE-JET MOLECULAR-FLOW - SURFACE-REACTION FILM-FORMATION TECHNOLOGY [J].

OHMI, T ;

MORITA, M ;

KOCHI, T ;

KOSUGI, M ;

KUMAGAI, H ;

ITOH, M .

APPLIED PHYSICS LETTERS, 1988, 52 (14) :1173-1175

[5]

OHMI T, 1987, P ELECTROCHEMICAL SO, V8711, P761

[6]

OHMI T, 1987, P ELECTROCHEMICAL SO, V8711, P574

[7]

OHMI T, 1988, 1ST INT S ADV MAT UL

[8] CRYSTALLINE AND ELECTRICAL CHARACTERISTICS OF SILICON FILMS DEPOSITED BY IONIZED-CLUSTER-BEAMS [J].

YAMADA, I ;

SARIS, FW ;

TAKAGI, T ;

MATSUBARA, K ;

TAKAOKA, H ;

ISHIYAMA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (04) :L181-L184

← 1 →