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CRYSTALLINE AND ELECTRICAL CHARACTERISTICS OF SILICON FILMS DEPOSITED BY IONIZED-CLUSTER-BEAMS
被引:27
作者
:
YAMADA, I
论文数:
0
引用数:
0
h-index:
0
机构:
FOM,INST ATOOM & MOLEC FYS,AMSTERDAM,NETHERLANDS
YAMADA, I
SARIS, FW
论文数:
0
引用数:
0
h-index:
0
机构:
FOM,INST ATOOM & MOLEC FYS,AMSTERDAM,NETHERLANDS
SARIS, FW
TAKAGI, T
论文数:
0
引用数:
0
h-index:
0
机构:
FOM,INST ATOOM & MOLEC FYS,AMSTERDAM,NETHERLANDS
TAKAGI, T
MATSUBARA, K
论文数:
0
引用数:
0
h-index:
0
机构:
FOM,INST ATOOM & MOLEC FYS,AMSTERDAM,NETHERLANDS
MATSUBARA, K
TAKAOKA, H
论文数:
0
引用数:
0
h-index:
0
机构:
FOM,INST ATOOM & MOLEC FYS,AMSTERDAM,NETHERLANDS
TAKAOKA, H
ISHIYAMA, S
论文数:
0
引用数:
0
h-index:
0
机构:
FOM,INST ATOOM & MOLEC FYS,AMSTERDAM,NETHERLANDS
ISHIYAMA, S
机构
:
[1]
FOM,INST ATOOM & MOLEC FYS,AMSTERDAM,NETHERLANDS
[2]
KYOTO UNIV,DEPT ELECTR,KYOTO 606,JAPAN
来源
:
JAPANESE JOURNAL OF APPLIED PHYSICS
|
1980年
/ 19卷
/ 04期
关键词
:
D O I
:
10.1143/JJAP.19.L181
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:L181 / L184
页数:4
相关论文
共 7 条
[1]
SILICON EPITAXY BY PULSED LASER ANNEALING OF EVAPORATED AMORPHOUS FILMS
HOONHOUT, D
论文数:
0
引用数:
0
h-index:
0
HOONHOUT, D
KERKDIJK, CB
论文数:
0
引用数:
0
h-index:
0
KERKDIJK, CB
SARIS, FW
论文数:
0
引用数:
0
h-index:
0
SARIS, FW
[J].
PHYSICS LETTERS A,
1978,
66
(02)
: 145
-
146
[2]
IONIZED-CLUSTER BEAM DEPOSITION AND EPITAXY
TAKAGI, T
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electronics, Kyoto University, Sakyo, Kyoto
TAKAGI, T
YAMADA, I
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electronics, Kyoto University, Sakyo, Kyoto
YAMADA, I
MATSUBARA, K
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electronics, Kyoto University, Sakyo, Kyoto
MATSUBARA, K
[J].
THIN SOLID FILMS,
1979,
58
(01)
: 9
-
19
[3]
EVALUATION OF METAL AND SEMICONDUCTOR-FILMS FORMED BY IONIZED-CLUSTER BEAM DEPOSITION
TAKAGI, T
论文数:
0
引用数:
0
h-index:
0
机构:
KYOTO UNIV,DEPT ELECTR,KYOTO 606,JAPAN
KYOTO UNIV,DEPT ELECTR,KYOTO 606,JAPAN
TAKAGI, T
YAMADA, I
论文数:
0
引用数:
0
h-index:
0
机构:
KYOTO UNIV,DEPT ELECTR,KYOTO 606,JAPAN
KYOTO UNIV,DEPT ELECTR,KYOTO 606,JAPAN
YAMADA, I
SASAKI, A
论文数:
0
引用数:
0
h-index:
0
机构:
KYOTO UNIV,DEPT ELECTR,KYOTO 606,JAPAN
KYOTO UNIV,DEPT ELECTR,KYOTO 606,JAPAN
SASAKI, A
[J].
THIN SOLID FILMS,
1976,
39
(DEC)
: 207
-
217
[4]
NEW DEVELOPMENTS IN IONIZED-CLUSTER BEAM AND REACTIVE IONIZED-CLUSTER BEAM DEPOSITION TECHNIQUES
TAKAGI, T
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electronics, Kyoto University, Kyoto
TAKAGI, T
MATSUBARA, K
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electronics, Kyoto University, Kyoto
MATSUBARA, K
TAKAOKA, H
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electronics, Kyoto University, Kyoto
TAKAOKA, H
YAMADA, I
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electronics, Kyoto University, Kyoto
YAMADA, I
[J].
THIN SOLID FILMS,
1979,
63
(01)
: 41
-
51
[5]
TAKAGI T, 1978, I PHYS C SER, V38, P229
[6]
LOW-ETMPERATURE EPITAXIAL GROWTH OF PN JUNCTIONS BY UHV SUBLIMATION
THOMAS, RN
论文数:
0
引用数:
0
h-index:
0
机构:
Westinghouse Research Laboratories, Pittsburgh
THOMAS, RN
FRANCOMBE, MH
论文数:
0
引用数:
0
h-index:
0
机构:
Westinghouse Research Laboratories, Pittsburgh
FRANCOMBE, MH
[J].
APPLIED PHYSICS LETTERS,
1968,
13
(08)
: 270
-
+
[7]
INFLUENCE OF DISTORTIONS ON APPARENT SURFACE RADIATION-DAMAGE CROSS-SECTIONS IN SI
TROMP, RM
论文数:
0
引用数:
0
h-index:
0
机构:
FOM,INST ATOM & MOLEC PHYS,NL-1098 SJ AMSTERDAM,NETHERLANDS
FOM,INST ATOM & MOLEC PHYS,NL-1098 SJ AMSTERDAM,NETHERLANDS
TROMP, RM
GARRETT, R
论文数:
0
引用数:
0
h-index:
0
机构:
FOM,INST ATOM & MOLEC PHYS,NL-1098 SJ AMSTERDAM,NETHERLANDS
FOM,INST ATOM & MOLEC PHYS,NL-1098 SJ AMSTERDAM,NETHERLANDS
GARRETT, R
YAMADA, I
论文数:
0
引用数:
0
h-index:
0
机构:
FOM,INST ATOM & MOLEC PHYS,NL-1098 SJ AMSTERDAM,NETHERLANDS
FOM,INST ATOM & MOLEC PHYS,NL-1098 SJ AMSTERDAM,NETHERLANDS
YAMADA, I
ROOSENDAAL, HE
论文数:
0
引用数:
0
h-index:
0
机构:
FOM,INST ATOM & MOLEC PHYS,NL-1098 SJ AMSTERDAM,NETHERLANDS
FOM,INST ATOM & MOLEC PHYS,NL-1098 SJ AMSTERDAM,NETHERLANDS
ROOSENDAAL, HE
SARIS, FW
论文数:
0
引用数:
0
h-index:
0
机构:
FOM,INST ATOM & MOLEC PHYS,NL-1098 SJ AMSTERDAM,NETHERLANDS
FOM,INST ATOM & MOLEC PHYS,NL-1098 SJ AMSTERDAM,NETHERLANDS
SARIS, FW
[J].
RADIATION EFFECTS LETTERS,
1979,
43
(06):
: 217
-
222
←
1
→
共 7 条
[1]
SILICON EPITAXY BY PULSED LASER ANNEALING OF EVAPORATED AMORPHOUS FILMS
HOONHOUT, D
论文数:
0
引用数:
0
h-index:
0
HOONHOUT, D
KERKDIJK, CB
论文数:
0
引用数:
0
h-index:
0
KERKDIJK, CB
SARIS, FW
论文数:
0
引用数:
0
h-index:
0
SARIS, FW
[J].
PHYSICS LETTERS A,
1978,
66
(02)
: 145
-
146
[2]
IONIZED-CLUSTER BEAM DEPOSITION AND EPITAXY
TAKAGI, T
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electronics, Kyoto University, Sakyo, Kyoto
TAKAGI, T
YAMADA, I
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electronics, Kyoto University, Sakyo, Kyoto
YAMADA, I
MATSUBARA, K
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electronics, Kyoto University, Sakyo, Kyoto
MATSUBARA, K
[J].
THIN SOLID FILMS,
1979,
58
(01)
: 9
-
19
[3]
EVALUATION OF METAL AND SEMICONDUCTOR-FILMS FORMED BY IONIZED-CLUSTER BEAM DEPOSITION
TAKAGI, T
论文数:
0
引用数:
0
h-index:
0
机构:
KYOTO UNIV,DEPT ELECTR,KYOTO 606,JAPAN
KYOTO UNIV,DEPT ELECTR,KYOTO 606,JAPAN
TAKAGI, T
YAMADA, I
论文数:
0
引用数:
0
h-index:
0
机构:
KYOTO UNIV,DEPT ELECTR,KYOTO 606,JAPAN
KYOTO UNIV,DEPT ELECTR,KYOTO 606,JAPAN
YAMADA, I
SASAKI, A
论文数:
0
引用数:
0
h-index:
0
机构:
KYOTO UNIV,DEPT ELECTR,KYOTO 606,JAPAN
KYOTO UNIV,DEPT ELECTR,KYOTO 606,JAPAN
SASAKI, A
[J].
THIN SOLID FILMS,
1976,
39
(DEC)
: 207
-
217
[4]
NEW DEVELOPMENTS IN IONIZED-CLUSTER BEAM AND REACTIVE IONIZED-CLUSTER BEAM DEPOSITION TECHNIQUES
TAKAGI, T
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electronics, Kyoto University, Kyoto
TAKAGI, T
MATSUBARA, K
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electronics, Kyoto University, Kyoto
MATSUBARA, K
TAKAOKA, H
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electronics, Kyoto University, Kyoto
TAKAOKA, H
YAMADA, I
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electronics, Kyoto University, Kyoto
YAMADA, I
[J].
THIN SOLID FILMS,
1979,
63
(01)
: 41
-
51
[5]
TAKAGI T, 1978, I PHYS C SER, V38, P229
[6]
LOW-ETMPERATURE EPITAXIAL GROWTH OF PN JUNCTIONS BY UHV SUBLIMATION
THOMAS, RN
论文数:
0
引用数:
0
h-index:
0
机构:
Westinghouse Research Laboratories, Pittsburgh
THOMAS, RN
FRANCOMBE, MH
论文数:
0
引用数:
0
h-index:
0
机构:
Westinghouse Research Laboratories, Pittsburgh
FRANCOMBE, MH
[J].
APPLIED PHYSICS LETTERS,
1968,
13
(08)
: 270
-
+
[7]
INFLUENCE OF DISTORTIONS ON APPARENT SURFACE RADIATION-DAMAGE CROSS-SECTIONS IN SI
TROMP, RM
论文数:
0
引用数:
0
h-index:
0
机构:
FOM,INST ATOM & MOLEC PHYS,NL-1098 SJ AMSTERDAM,NETHERLANDS
FOM,INST ATOM & MOLEC PHYS,NL-1098 SJ AMSTERDAM,NETHERLANDS
TROMP, RM
GARRETT, R
论文数:
0
引用数:
0
h-index:
0
机构:
FOM,INST ATOM & MOLEC PHYS,NL-1098 SJ AMSTERDAM,NETHERLANDS
FOM,INST ATOM & MOLEC PHYS,NL-1098 SJ AMSTERDAM,NETHERLANDS
GARRETT, R
YAMADA, I
论文数:
0
引用数:
0
h-index:
0
机构:
FOM,INST ATOM & MOLEC PHYS,NL-1098 SJ AMSTERDAM,NETHERLANDS
FOM,INST ATOM & MOLEC PHYS,NL-1098 SJ AMSTERDAM,NETHERLANDS
YAMADA, I
ROOSENDAAL, HE
论文数:
0
引用数:
0
h-index:
0
机构:
FOM,INST ATOM & MOLEC PHYS,NL-1098 SJ AMSTERDAM,NETHERLANDS
FOM,INST ATOM & MOLEC PHYS,NL-1098 SJ AMSTERDAM,NETHERLANDS
ROOSENDAAL, HE
SARIS, FW
论文数:
0
引用数:
0
h-index:
0
机构:
FOM,INST ATOM & MOLEC PHYS,NL-1098 SJ AMSTERDAM,NETHERLANDS
FOM,INST ATOM & MOLEC PHYS,NL-1098 SJ AMSTERDAM,NETHERLANDS
SARIS, FW
[J].
RADIATION EFFECTS LETTERS,
1979,
43
(06):
: 217
-
222
←
1
→