LOW-ETMPERATURE EPITAXIAL GROWTH OF PN JUNCTIONS BY UHV SUBLIMATION

The feasibility of growing epitaxial pn junctions at temperatures as low as 550°C by sublimation in UHV has been demonstrated. The junctions, which show abrupt impurity profiles, have excellent and predictable rectification characteristics. Transmission electron microscope studies suggest good crystallographic perfection. The relatively high minority carrier lifetime of 6 μsec which was measured indicates a low concentration of lifetime killing impurities at the junction region. © 1968 The American Institute of Physics.