A LEED STUDY OF HOMOEPITAXIAL GROWTH OF THICK SILICON FILMS

被引：57

作者：

THOMAS, RN

FRANCOMBE, MH

机构：

来源：

APPLIED PHYSICS LETTERS | 1967年 / 11卷 / 03期

关键词：

D O I：

10.1063/1.1755039

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：108 / +

页数：1

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WIDMER, H .

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