ELECTRICAL CHARACTERIZATION OF EPITAXIAL SILICON FILMS FORMED BY A LOW KINETIC-ENERGY PARTICLE PROCESS

被引：15

作者：

OHMI, T

IWABUCHI, H

SHIBATA, T

ICHIKAWA, T

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 03期

关键词：

D O I：

10.1063/1.100981

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：253 / 255

页数：3

共 11 条

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OHMI, T ;

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[4] ROOM-TEMPERATURE COPPER METALLIZATION FOR ULTRALARGE-SCALE INTEGRATED-CIRCUITS BY A LOW KINETIC-ENERGY PARTICLE PROCESS [J].

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[5] INSITU SUBSTRATE-SURFACE CLEANING FOR VERY LOW-TEMPERATURE SILICON EPITAXY BY LOW-KINETIC-ENERGY PARTICLE BOMBARDMENT [J].

OHMI, T ;

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MATSUDO, K ;

IWABUCHI, H .

APPLIED PHYSICS LETTERS, 1988, 53 (01) :45-47

[6] HIGH-RATE GROWTH AT LOW-TEMPERATURES BY FREE-JET MOLECULAR-FLOW - SURFACE-REACTION FILM-FORMATION TECHNOLOGY [J].

OHMI, T ;

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[8]

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