HIGH-MOBILITY MODULATION-DOPED GRADED SIGE-CHANNEL P-MOSFETS

被引:79
作者
VERDONCKTVANDEBROEK, S
CRABBE, EF
MEYERSON, BS
HARAME, DL
RESTLE, PJ
STORK, JMC
MEGDANIS, AC
STANIS, CL
BRIGHT, AA
KROESEN, GMW
WARREN, AC
机构
[1] IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights
[2] IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights
关键词
D O I
10.1109/55.119161
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report the successful fabrication and operation of the first modulation-doped SiGe-channel p-MOSFET's. A novel device design consisting of a graded SiGe channel, an n+ polysilicon gate, and p+ modulation doping is used. The boron-doped layer is placed underneath the undoped SiGe channel to achieve the desired threshold voltage without degrading the mobility. The low-field hole mobility for a channel graded from 25% to 15% germanium is 220 cm2/V.s at 300 K and increases to 980 cm2/V.s at 82 K.
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收藏
页码:447 / 449
页数:3
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