PHOTOLITHOGRAPHY SYSTEM USING MODIFIED ILLUMINATION

被引：12

作者：

KAMON, K ^{[1
]}

MIYAMOTO, T ^{[1
]}

MYOI, Y ^{[1
]}

NAGATA, H ^{[1
]}

TANAKA, M ^{[1
]}

机构：

[1] MITSUBISHI ELECTR CO,MFG DEV LAB,ITAMI,HYOGO 664,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 1A期

关键词：

LSI; PHOTOLITHOGRAPHY; ANNULAR ILLUMINATION; MODIFIED ILLUMINATION; RESOLUTION; DEPTH OF FOCUS; MULSS;

D O I：

10.1143/JJAP.32.239

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Since the LSI pattern size has approached the exposure wavelength, various methods have been developed to overcome limitations in photolithography. This fact indicates that a shorter wavelength or some novel techniques will be needed in order to cope with finer patterns. The modified illumination method was proposed in order to improve the depth of focus and resolution limit. We applied the modified illumination method to the step-and-repeat exposure system. Experiments using modified illumination were carried out and sub-half-micron patterns were produced. The process latitudes of the modified illumination method are evaluated.

引用

页码：239 / 243

页数：5