PHASE NOISE IN CRYOGENIC MICROWAVE HEMT AND MESFET OSCILLATORS

被引：12

作者：

LLOPIS, O

PLANA, R

AMINE, H

ESCOTTE, L

GRAFFEUIL, J

机构：

[1] LAAS-CNRS, 31 077, Toulouse Cedex

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1993年 / 41卷 / 03期

关键词：

D O I：

10.1109/22.223733

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper addresses the influence of cooling on the phase noise of HEMT and MESFET oscillators. The initial measurements of the device dc characteristics and low frequency noise (0.1 kHz-100 kHz) under cooling give indications on the suitability of a given device for use in low phase noise cooled oscillators. Cooled pseudomorphic AlGaAs/GaInAs/GaAs HEMT's (PHEMT's) turn out to be particularly well-suited as they are free of collapse and they are free of g-r noise in the frequency range of interest. We report on 4 GHz oscillators operated at 110 K and featuring a phase noise below -100 dBc/Hz at 10 kHz from the carrier in spite of a very modest loaded Q (160). It is suggested that high temperature superconductor resonators could greatly enhance the spectral purity of PHEMT's oscillators.

引用

页码：369 / 374

页数：6

共 21 条

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[2] EXPERIMENTAL-ANALYSIS OF HEMT BEHAVIOR UNDER LOW-TEMPERATURE CONDITIONS [J].