EFFICIENT GREEN ELECTROLUMINESCENCE FROM GAP P-N JUNCTIONS GROWN BY LIQUID-PHASE EPITAXY

被引：21

作者：

SHIH, KK

WOODALL, JM

BLUM, SE

FOSTER, LM

机构：

[1] IBM Watson Research Center, Yorktown Heights, NY

来源：

JOURNAL OF APPLIED PHYSICS | 1968年 / 39卷 / 06期

关键词：

D O I：

10.1063/1.1656703

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

[No abstract available]

引用

页码：2962 / &

共 8 条

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BLUM, SE ;

CHICOTKA, RJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (03) :298-&

[2] FORMATION OF BUILT-IN LIGHT-EMITTING JUNCTIONS IN SOLUTION-GROWN GAP CONTAINING SHALLOW DONORS AND ACCEPTORS [J].

FOSTER, LM ;

PLASKETT, TS ;

SCARDEFI.JE .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1966, 10 (02) :114-&

[3] ELECTROLUMINESCENCE NEAR BAND GAP IN GALLIUM PHOSPHIDE CONTAINING SHALLOW DONOR AND ACCEPTOR LEVELS (ELECTROLUMINESCENCE P-N JUNCTIONS 77-300DEGREES K RADIATIVE RECOMBINATION E) [J].

FOSTER, LM ;

PILKUHN, M .

APPLIED PHYSICS LETTERS, 1965, 7 (03) :65-&

[4] LUMINESCENCE FROM GAP CONTAINING SILICON [J].

LORENZ, MR ;

PILKUHN, MH .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (01) :61-&

[5]

LORENZ MR, 1966, J PHYS SOC JAPA S283, V21

[6]

NELSON H, 1963, RCA REV, V24, P603

[7] GREEN LUMINESCENCE FROM SOLUTION-GROWN JUNCTIONS IN GAP CONTAINING SHALLOW DONORS AND ACCEPTORS [J].

PILKUHN, MH ;

FOSTER, LM .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1966, 10 (02) :122-&

[8] EFFICIENT VISIBLE ELECTROLUMINESCENCE AT 300 DEGREES K FROM GA1-XALXAS P-N JUNCTIONS GROWN BY LIQUID-PHASE EPITAXY [J].

RUPPRECHT, H ;

WOODALL, JM ;

PETTIT, GD .

APPLIED PHYSICS LETTERS, 1967, 11 (03) :81-+

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