ELECTROLUMINESCENCE NEAR BAND GAP IN GALLIUM PHOSPHIDE CONTAINING SHALLOW DONOR AND ACCEPTOR LEVELS (ELECTROLUMINESCENCE P-N JUNCTIONS 77-300DEGREES K RADIATIVE RECOMBINATION E)

被引：13

作者：

FOSTER, LM

PILKUHN, M

机构：

来源：

APPLIED PHYSICS LETTERS | 1965年 / 7卷 / 03期

关键词：

D O I：

10.1063/1.1754302

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：65 / &

共 10 条

[1] ELECTRON-HOLE AND ELECTRON-IMPURITY BAND TUNNELING IN GAAS LUMINESCENT JUNCTIONS [J].

ARCHER, RJ ;

LEITE, RC ;

YARIV, A ;

PORTO, SPS ;

WHELAN, JM .

PHYSICAL REVIEW LETTERS, 1963, 10 (11) :483-&

[2]

FOSTER LM, TO BE PUBLISHED

[3] ELECTROLUMINESCENT RECOMBINATION NEAR THE ENERGY GAP IN GAP DIODES [J].

GERSHENZON, M ;

MIKULYAK, RM ;

LOGAN, RA ;

FOY, PW .

SOLID-STATE ELECTRONICS, 1964, 7 (02) :113-124

[4]

LEITE RCC, 1965, PHYS REV, VA137, P1583

[5] RADIATIVE RECOMBINATION IN GAP P-N AND TUNNEL JUNCTIONS [J].

LOGAN, RA ;

GERSHENZON, M ;

TRUMBORE, FA ;

WHITE, HG .

APPLIED PHYSICS LETTERS, 1965, 6 (06) :113-+

[6]

LOGAN RA, 1965, B AM PHYS SOC, V10, P388

[7]

MORGAN TDB, TO BE PUBLISHED

[8]

MORGAN TN, 1965, B AM PHYS SOC, V10, P389

[9] TUNNELING-ASSISTED PHOTON EMISSION IN GALLIUM ARSENIDE PN JUNCTIONS [J].

PANKOVE, JI .

PHYSICAL REVIEW LETTERS, 1962, 9 (07) :283-&

[10]

TRUMBORE FA, 1965, PHYS REV, V137, P1030

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