ANGULAR-DEPENDENCE OF SPUTTERING YIELD

被引：7

作者：

GHOSE, D

机构：

来源：

关键词：

D O I：

10.1143/JJAP.18.1847

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

[No abstract available]

引用

页码：1847 / 1848

页数：2

共 11 条

CHADDERTON, LT .

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[2]

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[3]

Lindhard J, 1965, K DAN VIDENSK SELSK, V34

[4] SINGLE-CRYSTAL SPUTTERING INCLUDING CHANNELING PHENOMENON [J].

ONDERDELINDEN, D .

[5] MICROTOPOGRAPHY OF SURFACES ERODED BY ION-BOMBARDMENT [J].

STEWART, ADG ;

THOMPSON, MW .

[6]

TANOVIC L, 1978, 78 P C PHYS ION GAS, P171

[7] STUDY OF CONES DEVELOPED BY ION-BOMBARDMENT OF GOLD [J].

WILSON, IH .

WITCOMB, MJ .

[9] ANGULAR VARIATION OF SPUTTER YIELD PEAK FOR SILICA GLASS TARGETS [J].

WITCOMB, MJ .

[10] ANGULAR-DEPENDENCE OF SPUTTER YIELD MAXIMA [J].

WITCOMB, MJ .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 27 (3-4) :223-227