A MONOLITHIC RADIATION-TOLERANT CHARGE-SENSITIVE PREAMPLIFIER

被引：3

作者：

BUTTLER, W

CITTERIO, M

LUTZ, G

MANFREDI, PF

RE, V

SPEZIALI, V

机构：

[1] UNIV PAVIA,DIPARTIMENTO ELETTRON,I-27100 PAVIA,ITALY

[2] IST NAZL FIS NUCL,I-20133 MILAN,ITALY

[3] MAX PLANCK INST PHYS & ASTROPHYS,W-8000 MUNICH 40,GERMANY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1990年 / 292卷 / 02期

关键词：

D O I：

10.1016/0168-9002(90)90399-Q

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A monolithic charge-sensitive preamplifier based on N-channel junction field-effect transistors (NJFETs) and P-channel MOS (PMOS) has been realized for applications with multielectrode detectors in elementary particle physics. Radiation resistance tests carried out with the preamplifier exposed to γ-rays emitted by a 60Co source have shown no degradation in equivalent noise charge up to 150 krad absorbed dose. © 1990.

引用

收藏

页码：435 / 438

页数：4

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