OVERVIEW OF RADIATION HARDENING FOR SEMICONDUCTOR-DETECTORS

被引：6

作者：

DAWES, WR

机构：

[1] Sandia National Laboratories, Albuquerque

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1990年 / 288卷 / 01期

关键词：

D O I：

10.1016/0168-9002(90)90463-G

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Semiconductor detectors for high energy physics applications offer the potential to obtain accurate particle spatial resolution and on-line data reduction. A significant disadvantage of semiconductor detectors and their associated circuitry however, is their sensitivity to radiation. Fortunately, a sufficient understanding of radiation effects on semiconductor devices exists that some classes of radiation tolerant semiconductor detectors are possible. © 1990.

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页码：54 / 61

页数：8

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