CROSS SLIP OF SINGLE DISSOCIATED SCREW DISLOCATIONS IN SILICON AND GERMANIUM

被引：20

作者：

MOLLER, HJ

EWALDT, H

HAASEN, P

机构：

[1] Institut Für Metallphysik, Universität Göttingen

[2] Valvo GmbH, Hamburg, D-2000, Burchhardtstr

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1979年 / 55卷 / 02期

关键词：

D O I：

10.1002/pssa.2210550214

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Isolated screw segments intersecting a surface are shown to cross slip during annealing at T > > 0.6Tm in germanium and T > 0.7Tm in silicon. The process is investigated quantitatively by the double etching method and by X‐ray topography. The activation energy can be determined and is compared with theoretical models of the cross slip process. Copyright © 1979 WILEY‐VCH Verlag GmbH & Co. KGaA

引用

页码：469 / 478

页数：10

共 24 条

[1]

BONDARENKO IE, 1971, J EXPT THEOR PHYS, V37, P1109

[2]

Erofeev V. N., 1971, Fizika Tverdogo Tela, V13, P300

[3]

ESCAIG B, 1968, J PHYS, V29, P255

[4]

EWALDT H, 1978, THESIS GOTTINGEN

[5]

Friedel J., 1957, DISLOCATIONS MECHANI, P330

[6]

George A., 1973, Crystal Lattice Defects, V4, P29

[7]

GEORGE A, 1972, PHYS STATUS SOLIDI B, V53, P483, DOI 10.1002/pssb.2220530209

[8] A SURFACE EFFECT ASSOCIATED WITH DISLOCATION RIBBONS [J].

GEVERS, R ;

AMELINCKX, S ;

DELAVIGNETTE, P .

PHILOSOPHICAL MAGAZINE, 1961, 6 (72) :1515-+

[9] DISSOCIATION OF NEAR-SCREW DISLOCATIONS IN GERMANIUM AND SILICON [J].

GOMEZ, A ;

COCKAYNE, DJ ;

HIRSCH, PB ;

VITEK, V .

PHILOSOPHICAL MAGAZINE, 1975, 31 (01) :105-113

[10] MOBILITY OF DISLOCATIONS IN GERMANIUM AND SILICON [J].

GOMEZ, AM ;

HIRSCH, PB .

PHILOSOPHICAL MAGAZINE, 1977, 36 (01) :169-179

← 1 2 3 →