SEMIMETALLIC BEHAVIOR OF I-ALCUFE QUASI-CRYSTALS

被引:18
作者
HABERKERN, R
FRITSCH, G
HARTING, M
机构
[1] Universität der Bundeswehr München, BauV/I1 Physik, Neubiberg
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1993年 / 57卷 / 05期
关键词
D O I
10.1007/BF00331782
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report on new measurements of the electrical conductivity, Hall effect and thermoelectric power in the temperature range from 2 K to 440 K for AlCuFe quasicrystals of different compositions and annealing treatments. Particularly, the Hall coefficient and the thermopower show a strong dependence on composition and also on heat treatment. The increase of sample perfection on annealing between 810-degrees-C and 825-degrees-C is demonstrated by analysing X-ray measurements. All measured quantities can be explained in terms of a semimetal containing both electrons and holes at low temperatures, at least for samples near the ideal quasicrystalline structure and composition.
引用
收藏
页码:431 / 435
页数:5
相关论文
共 16 条
[11]  
LINDQVIST P, IN PRESS PHYS REV B
[12]  
MAYOU D, IN PRESS PHYS REV LE
[13]   ELECTRONIC-PROPERTIES OF QUASI-CRYSTALS - AN EXPERIMENTAL REVIEW [J].
POON, SJ .
ADVANCES IN PHYSICS, 1992, 41 (04) :303-363
[14]   MEASUREMENT OF THERMOELECTRIC-POWER OF SOLIDS UP TO 10 GPA [J].
SINGH, AK ;
RAMANI, G .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1978, 49 (09) :1324-1326
[15]   BAND-STRUCTURE EFFECTS ON THE ELECTRONIC-PROPERTIES OF ICOSAHEDRAL ALLOYS [J].
WAGNER, JL ;
BIGGS, BD ;
POON, SJ .
PHYSICAL REVIEW LETTERS, 1990, 65 (02) :203-206
[16]  
Ziman, 1960, ELECT PHONONS