HIGH COERCIVITY FESMN THIN-FILMS FOR LONGITUDINAL MAGNETIC RECORDING MEDIA

被引:4
作者
WANG, D [1 ]
DOYLE, WD [1 ]
机构
[1] UNIV ALABAMA,CTR MAT INFORM TECHNOL,TUSCALOOSA,AL 35487
关键词
D O I
10.1109/20.333980
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
FeSm thin films with an Fe/Sm atomic ratio of 9.2 have been deposited by de magnetron sputtering on Ta and Cu substrates held at 400 degrees C. FeSmN films with in-plane easy axes were obtained by annealing the FeSm films in-situ under a nitrogen atmosphere of 300 Torr at a temperature of 400 degrees C. The coercivity of the FeSmN films varies from 2 kOe to as high as 7 kOe depending on the deposition conditions. Typical FeSmN films have a magnetization of similar to 140 emu/g, a squareness of 0.90 and a coercivity squareness of 0.75, It was found that when a Cr underlayer was deposited at a substrate temperature of 350 degrees C, FeSmN films of 150 nm thickness with an in-plane coercivity of 6.4 kOe, a squareness of 0.90 and a coercivity squareness of 0.6 were obtained.
引用
收藏
页码:4032 / 4034
页数:3
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