MAGNETIC EASY-AXIS RANDOMLY INPLANE ORIENTED BARIUM HEXAFERRITE THIN-FILM MEDIA

被引：94

作者：

SUI, XY

KRYDER, MH

机构：

[1] Data Storage Systems Center, Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 11期

关键词：

D O I：

10.1063/1.110755

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High coercivity, c-axis randomly in-plane oriented barium hexaferrite thin films have been successfully fabricated by using conventional rf diode sputtering and post-deposition annealing. Coercivities as high as 4100 Oe have been achieved. M(s), S(q), S*, SFD, and SFD(r) reach the values of about 270 emu/cc, 0.63, 0.90, 0.12, and 0.084, respectively. CoTi doping not only reduces the coercivity, but also reduces the grain size and improves the c-axis in-plane orientation. The composition of doped films can be controlled through different diffusion processes. In this way coercivities in a range between several hundred oersteds and 4000 Oe can be easily obtained.

引用

页码：1582 / 1584

页数：3

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