RAMAN SPIN-LATTICE RELAXATION OF SHALLOW DONORS IN SILICON

被引：60

作者：

CASTNER, TG

机构：

来源：

PHYSICAL REVIEW | 1963年 / 130卷 / 01期

关键词：

D O I：

10.1103/PhysRev.130.58

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：58 / &

共 41 条

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[7]

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