RAMAN SCATTERING FROM SOLID-STATE PLASMAS

被引：34

作者：

PLATZMAN, PM

TZOAR, N

机构：

[1] Bell Telephone Laboratories, Murray Hill

[2] City College of The City University of New York, New York

来源：

PHYSICAL REVIEW | 1969年 / 182卷 / 02期

关键词：

D O I：

10.1103/PhysRev.182.510

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A microscopic calculation of the Raman scattering process in almost transparent semiconductors is presented. The calculation takes into account band structure, phonons, and the collective motions of the conduction electrons. It is based on many-body perturbation theory and is valid" within the framework of the random-phase approximation. Our results show resonance scattering from the coupled collective modes of the conduction-electron longitudinal-optic-mode system. The detailed effect of the band structure manifests itself in determining the intensity of the resonance lines. © 1969 The American Physical Society."

引用

页码：510 / &