HIGH-FIELD AND LOW-FIELD TRANSPORT IN AMORPHOUS-SEMICONDUCTORS

被引：8

作者：

CLEVE, B ^{[1
]}

MOVAGHAR, B ^{[1
]}

SCHUMACHER, R ^{[1
]}

THOMAS, P ^{[1
]}

机构：

[1] UNIV MARBURG,WISSENSCH ZENTRUM MAT WISSENSCH,W-3550 MARBURG,GERMANY

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1991年 / 137卷

关键词：

D O I：

10.1016/S0022-3093(05)80143-7

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Field and temperature dependence of transits in amorphous semiconductors are tackled using two different methods. We use analytical and Monte-Carlo simulation techniques. We compare with existing data on hopping systems. The model does seem to account reasonably well for the observed temperature and exp(-eta-F-alpha) field dependence of transit times in amorphous semiconductor multilayers. The anomaly in the low field temperature dependence observed by the Dundee group however cannot be produced by the simple hopping model. The reasons are discussed.

引用

页码：415 / 418

页数：4

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