GUNN-EFFECT AND HIGH-INJECTION PHENOMENON IN HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：5

作者：

POSSE, VA

JALALI, B

机构：

[1] Electrical Engineering Department, University of California, Los Angeles, CA 90024-1594

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 22期

关键词：

GUNN EFFECT; HETEROJUNCTION BIPOLAR TRANSISTORS;

D O I：

10.1049/el:19941269

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The transferred-electron effect in the collector region of heterojunction bipolar transistors is investigated. Conditions necessary for observation of Gunn instabilities are analysed and it is shown that stability of the conventional III-V HBT is ensured by the Kirk effect which occurs at a similar threshold current density as the Gunn effect.

引用

页码：1893 / 1894

页数：2