GRUNN EFFECT IN HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：8

作者：

POSSE, VA

JALALI, B

机构：

[1] Electrical Engineering Department, University of California, Los Angeles, CA 90024-1594

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 14期

关键词：

HETEROJUNCTIONS BIPOLAR TRANSISTORS; GUNN EFFECT;

D O I：

10.1049/el:19940794

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The Gunn effect in III-IV heterojunction bipolar transistors is investigated using hydrodynamic simulations. It is shown that Gunn domains nucleate and propagate in the collector drift region of an npn AlGaAs/GaAs transistor in which the electric field at the base-collector space charge region is properly engineered.

引用

页码：1183 / 1184

页数：2

共 7 条

[1] GUNN-EFFECT IN MESFET-LIKE STRUCTURES [J].