GUNN-EFFECT IN MESFET-LIKE STRUCTURES

被引：3

作者：

DISKUS, CG

LUBKE, K

SPRINGER, AL

LETTENMAYR, HW

THIM, HW

机构：

[1] Institut fiir Mikroelektronik, Universität Linz

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 11期

关键词：

SEMICONDUCTOR DEVICES AND MATERIALS; FIELD-EFFECT DEVICES; MICROWAVE INTEGRATED CIRCUITS; MICROWAVE OSCILLATORS; GALLIUM ARSENIDE;

D O I：

10.1049/el:19920623

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The performance of planar field-effect controlled transferred electron oscillators with different combinations of layer thickness and doping concentration has been investigated. A negative differential resistance has even been obtained with 0.29-mu-m thick 1.6 x 10(17) cm-3 n-doped samples. This is the first time a MESFET-like active layer has exhibited the Gunn effect and has successfully been operated as a TEO at 36 GHz.

引用

页码：980 / 981

页数：2

共 5 条

[1]

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[2]

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