MIMIC-COMPATIBLE GAAS AND INP FIELD-EFFECT CONTROLLED TRANSFERRED ELECTRON (FECTED) OSCILLATORS

被引：9

作者：

SCHEIBER, H

LUBKE, K

GRUTZMACHER, D

DISKUS, CG

THIM, HW

机构：

[1] UNIV LINZ,INST MIKROELEKTR,A-4040 LINZ,AUSTRIA

[2] RHEIN WESTFAL TH AACHEN,INST HALBLEITERTECH,W-5100 AACHEN,GERMANY

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1989年 / 37卷 / 12期

关键词：

D O I：

10.1109/22.44127

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2093 / 2098

页数：6

共 9 条

[1]

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SCHEIBER H, 1988, ELECTRON LETT, V25, P223

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[8] PARASITIC BIPOLAR EFFECTS IN SUBMICROMETER GAAS-MESFETS [J].

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VETTIGER, P .

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[9] 2-DIMENSIONAL NUMERICAL-ANALYSIS OF STABILITY-CRITERIA OF GAAS FETS [J].

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ASAI, S ;

KODERA, H .

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