PARASITIC BIPOLAR EFFECTS IN SUBMICROMETER GAAS-MESFETS

被引：26

作者：

VANZEGHBROECK, BJ

PATRICK, W

MEIER, H

VETTIGER, P

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1987年 / 8卷 / 05期

关键词：

D O I：

10.1109/EDL.1987.26598

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：188 / 190

页数：3

共 10 条

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[10] BURIED P-LAYER SAINT FOR VERY HIGH-SPEED GAAS LSIS WITH SUBMICROMETER GATE LENGTH [J].

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