SCALED GAAS-MESFETS WITH GATE LENGTH DOWN TO 100 NM

[1] SELF-ALIGNED MESFETS BY A DUAL-LEVEL DOUBLE-LIFT-OFF SUBSTITUTIONAL GATE (DDS) TECHNIQUE FOR HIGH-SPEED LOW-POWER GAAS ICS [J]. ELECTRONICS LETTERS, 1985, 21 (08) : 354 - 356

[2] CHANG THP, 1976, 7TH P INT C EL ION B, P392

[3] ELECTRON-BEAM LITHOGRAPHY IN N+ SELF-ALIGNED GAAS-MESFET FABRICATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (06) : 663 - 668

[4] HIGH-TRANSCONDUCTANCE SELF ALIGNED GAAS-MESFET USING IMPLANTATION THROUGH AN AIN LAYER [J]. ELECTRONICS LETTERS, 1984, 20 (01) : 45 - 47

[5] VERY SHORT GATE-LENGTH GAAS-MESFETS [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (09) : 471 - 472

[6] UENO K, 1985, 17TH C SOL STAT DEV, P405

[7] GAAS LSI-DIRECTED MESFETS WITH SELF-ALIGNED IMPLANTATION FOR N+-LAYER TECHNOLOGY (SAINT) [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (11) : 1772 - 1777

[8] BURIED P-LAYER SAINT FOR VERY HIGH-SPEED GAAS LSIS WITH SUBMICROMETER GATE LENGTH [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (11) : 2420 - 2425

[9] A GAAS 1K STATIC RAM USING TUNGSTEN SILICIDE GATE SELF-ALIGNED TECHNOLOGY [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1983, 18 (05) : 520 - 524

[1] SELF-ALIGNED MESFETS BY A DUAL-LEVEL DOUBLE-LIFT-OFF SUBSTITUTIONAL GATE (DDS) TECHNIQUE FOR HIGH-SPEED LOW-POWER GAAS ICS [J]. ELECTRONICS LETTERS, 1985, 21 (08) : 354 - 356

[2] CHANG THP, 1976, 7TH P INT C EL ION B, P392

[3] ELECTRON-BEAM LITHOGRAPHY IN N+ SELF-ALIGNED GAAS-MESFET FABRICATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (06) : 663 - 668

[4] HIGH-TRANSCONDUCTANCE SELF ALIGNED GAAS-MESFET USING IMPLANTATION THROUGH AN AIN LAYER [J]. ELECTRONICS LETTERS, 1984, 20 (01) : 45 - 47

[5] VERY SHORT GATE-LENGTH GAAS-MESFETS [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (09) : 471 - 472

[6] UENO K, 1985, 17TH C SOL STAT DEV, P405

[7] GAAS LSI-DIRECTED MESFETS WITH SELF-ALIGNED IMPLANTATION FOR N+-LAYER TECHNOLOGY (SAINT) [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (11) : 1772 - 1777

[8] BURIED P-LAYER SAINT FOR VERY HIGH-SPEED GAAS LSIS WITH SUBMICROMETER GATE LENGTH [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (11) : 2420 - 2425

[9] A GAAS 1K STATIC RAM USING TUNGSTEN SILICIDE GATE SELF-ALIGNED TECHNOLOGY [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1983, 18 (05) : 520 - 524