SELF-ALIGNED MESFETS BY A DUAL-LEVEL DOUBLE-LIFT-OFF SUBSTITUTIONAL GATE (DDS) TECHNIQUE FOR HIGH-SPEED LOW-POWER GAAS ICS

被引：5

作者：

CHANG, MF

RYAN, FJ

VAHRENKAMP, RP

KIRKPATRICK, CG

机构：

来源：

ELECTRONICS LETTERS | 1985年 / 21卷 / 08期

关键词：

D O I：

10.1049/el:19850250

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：354 / 356

页数：3

相关论文

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[2] HIGH-TRANSCONDUCTANCE SELF ALIGNED GAAS-MESFET USING IMPLANTATION THROUGH AN AIN LAYER
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[4] SELF-ALIGN IMPLANTATION FOR N+-LAYER TECHNOLOGY (SAINT) FOR HIGH-SPEED GAAS ICS
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KURUMADA, K
[J]. ELECTRONICS LETTERS, 1982, 18 (03) : 119 - 121
[5] YOKOYAMA N, 1983, GAAS 1K STATIC RAM U, P44