Q-BAND GAAS-MESFET OSCILLATOR WITH 30-PERCENT EFFICIENCY

被引：5

作者：

TSERNG, HQ

KIM, B

机构：

[1] Texas Instruments Inc, Dallas, TX,, USA, Texas Instruments Inc, Dallas, TX, USA

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 02期

关键词：

D O I：

10.1049/el:19880054

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：83 / 84

页数：2

共 10 条

[1] HIGH-EFFICIENCY KA-BAND AND KU-BAND MESFET OSCILLATORS [J].

EVANS, DH .

ELECTRONICS LETTERS, 1985, 21 (06) :254-255

[2]

GEDDES J, 1984 IEEE MICR MILL, P87

[3] MILLIMETER-WAVE GAAS-FETS PREPARED BY MBE [J].

KIM, B ;

TSERNG, HQ ;

SHIH, HD .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (01) :1-2

[4]

KIM B, 1987, MICROWAVE J MAR, P153

[5]

KIM B, 1986 GAAS IC S, P61

[6]

KOBIKI M, 1985 IEEE MICR MILL, P31

[7] HIGH-EFFICIENCY 35-GHZ GAAS-MESFETS [J].

TAYLOR, GC ;

ERON, M ;

BECHTLE, DW ;

LIU, SG ;

CAMISA, RL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (06) :1259-1263

[8] 110 GHZ GAAS-FET OSCILLATOR [J].

TSERNG, HQ ;

KIM, B .

ELECTRONICS LETTERS, 1985, 21 (05) :178-179

[9] HIGH-EFFICIENCY Q-BAND GAAS-FET OSCILLATOR [J].

TSERNG, HQ ;

KIM, B .

ELECTRONICS LETTERS, 1984, 20 (07) :297-298

[10]

TSERNG HQ, 1985 GAAS IC S, P11

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